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Part Number
Manufacturer
Description
Unit Price
In Stock
RN1110MFV,L3F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
0
100 in stock
RN1111,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
.jpg "Show details for RN1111ACT(TPL3)")
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1111CT(TPL3)")
RN1111CT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1112(T5L,F,T)")
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
.jpg "Show details for RN1112ACT(TPL3)")
RN1112ACT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1112CT(TPL3)")
RN1112CT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1113(T5L,F,T)")
RN1113(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
.jpg "Show details for RN1113ACT(TPL3)")
RN1113ACT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1113CT(TPL3)")
RN1113CT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1114(T5L,F,T)")
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
RN1115,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
2033 in stock
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