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Part Number
Manufacturer
Description
Unit Price
In Stock
PDTD123TK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTD123TS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTD123TT,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
1780 in stock
PDTD123YK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTD123YS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTD123YT,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
PDTD143ETR
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 225MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 225MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
PDTD143XTR
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 225MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 225MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
RN1101,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-75, SOT-416
Supplier Device Package : SSM
0
100 in stock
.jpg "Show details for RN1101ACT(TPL3)")
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 80mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
.jpg "Show details for RN1101CT(TPL3)")
RN1101CT(TPL3)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 50mW
Mounting Type : Surface Mount
Package / Case : SC-101, SOT-883
Supplier Device Package : CST3
0
100 in stock
RN1101MFV,L3F
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
0
100 in stock
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