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Part Number
Manufacturer
Description
Unit Price
In Stock
PDTB113ZK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTB113ZS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTB113ZT,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
PDTB114ETR
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 140MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 140MHz
Power - Max : 320mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
PDTB123EK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTB123ES,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTB123ET,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
2977 in stock
PDTB123TK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTB123TS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTB123YK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PDTB123YS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PDTB123YT,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
100 in stock
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