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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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Part Number
Manufacturer
Description
Unit Price
In Stock
NSVMMUN2235LT1G
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 246mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3 (TO-236)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 246mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3 (TO-236)
0
14614 in stock
NSVMUN2212T1G
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 230mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 230mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SC-59-3
0
6000 in stock
NSVMUN5132T1G
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 202mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 202mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : SC-70-3
0
14960 in stock
PBRN113EK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PBRN113ES,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PBRN113ET,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
3984 in stock
PBRN113ZK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PBRN113ZS,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PBRN113ZT,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
14 in stock
PBRN123EK,115
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SMT3; MPAK
0
100 in stock
PBRN123ES,126
NXP Semiconductors / Freescale
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 700mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
0
100 in stock
PBRN123ET,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 250mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236AB (SOT23)
0
3772 in stock
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