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Part Number
Manufacturer
Description
Unit Price
In Stock

2N3806 2N3806

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : -
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3807 2N3807

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : -
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3808 2N3808

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : -
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3809 2N3809

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : -
Current - Collector Cutoff (Max) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3810 2N3810

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) : 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3810 2N3810

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
358 in stock

2N3810A 2N3810A

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) : 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3811 2N3811

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) : 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
94 in stock

2N3811 2N3811

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3811A 2N3811A

Central Semiconductor
Manufacturer : Central Semiconductor Corp
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) : 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 600mW
Frequency - Transition : 100MHz
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3811L 2N3811L

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock

2N3811U 2N3811U

Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock