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Part Number
Manufacturer
Description
Unit Price
In Stock
RN4906FE,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
100 in stock
.jpg "Show details for RN4907(T5L,F,T)")
RN4907(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
RN4907,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
RN4907FE,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz, 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz, 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
6717 in stock
.jpg "Show details for RN4908(T5L,F,T)")
RN4908(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
.jpg "Show details for RN4909(T5L,F,T)")
RN4909(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
.jpg "Show details for RN4910(T5L,F,T)")
RN4910(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
RN4910,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
.jpg "Show details for RN4911(T5L,F,T)")
RN4911(T5L,F,T)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
100 in stock
RN4981,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100µA (ICBO)
Frequency - Transition : 250MHz, 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100µA (ICBO)
Frequency - Transition : 250MHz, 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
935 in stock
RN4981FE,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz, 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz, 200MHz
Power - Max : 100mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
0
3885 in stock
RN4982,LF(CT
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100µA (ICBO)
Frequency - Transition : 250MHz, 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100µA (ICBO)
Frequency - Transition : 250MHz, 200MHz
Power - Max : 200mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
0
1634 in stock
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