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- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Part Number
Manufacturer
Description
Unit Price
In Stock
PQMD12Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
14970 in stock
PQMD13Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4900 in stock
PQMD16Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4995 in stock
PQMD2Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4767 in stock
PQMD3Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz, 180MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4990 in stock
PQMH10Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 350mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4990 in stock
PQMH11Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
2900 in stock
PQMH13Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4875 in stock
PQMH2Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4995 in stock
PQMH9Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 1µA
Frequency - Transition : 230MHz
Power - Max : 230mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1010B-6
0
4995 in stock
PRMB11Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 100nA
Frequency - Transition : 180MHz
Power - Max : 480mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1412-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) : 100nA
Frequency - Transition : 180MHz
Power - Max : 480mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1412-6
0
4500 in stock
PRMD10Z
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA
Frequency - Transition : 230MHz
Power - Max : 480mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1412-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101
Part Status : Active
Transistor Type : 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA
Frequency - Transition : 230MHz
Power - Max : 480mW
Package / Case : 6-XFDFN Exposed Pad
Supplier Device Package : DFN1412-6
0
5000 in stock
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