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Part Number
Manufacturer
Description
Unit Price
In Stock
1N6622US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 660V
Current - Average Rectified (Io) : 1.2A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 1.2A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 500nA @ 660V
Capacitance @ Vr, F : 10pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : A-MELF
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 660V
Current - Average Rectified (Io) : 1.2A
Voltage - Forward (Vf) (Max) @ If : 1.4V @ 1.2A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 500nA @ 660V
Capacitance @ Vr, F : 10pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : A-MELF
Operating Temperature - Junction : -65°C ~ 150°C
0
63 in stock
1N6628US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 660V
Current - Average Rectified (Io) : 1.75A
Voltage - Forward (Vf) (Max) @ If : 1.35V @ 2A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 2µA @ 660V
Capacitance @ Vr, F : 40pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : A-MELF
Operating Temperature - Junction : -65°C ~ 150°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 660V
Current - Average Rectified (Io) : 1.75A
Voltage - Forward (Vf) (Max) @ If : 1.35V @ 2A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 2µA @ 660V
Capacitance @ Vr, F : 40pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : A-MELF
Operating Temperature - Junction : -65°C ~ 150°C
0
16 in stock
1N6640US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 200mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, D
Supplier Device Package : D-5D
Operating Temperature - Junction : -65°C ~ 175°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 200mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, D
Supplier Device Package : D-5D
Operating Temperature - Junction : -65°C ~ 175°C
0
8 in stock
1N6642US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 5ns
Current - Reverse Leakage @ Vr : 500nA @ 75V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, D
Supplier Device Package : D-5D
Operating Temperature - Junction : -65°C ~ 175°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 5ns
Current - Reverse Leakage @ Vr : 500nA @ 75V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, D
Supplier Device Package : D-5D
Operating Temperature - Junction : -65°C ~ 175°C
0
753 in stock
1N6643US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 50nA @ 50V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 300mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 50nA @ 50V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C
0
456 in stock
1N6663US
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 500mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 400mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 50nA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : D-5A
Operating Temperature - Junction : -65°C ~ 175°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 500mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 400mA
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 50nA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : D-5A
Operating Temperature - Junction : -65°C ~ 175°C
0
8 in stock
1N8024-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.74V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 66pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.74V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 66pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
9 in stock
1N8026-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
1 in stock
1N8030-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.39V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 750mA
Voltage - Forward (Vf) (Max) @ If : 1.39V @ 750mA
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
9 in stock
1N8032-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 274pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 2.5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 274pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-257-3
Supplier Device Package : TO-257
Operating Temperature - Junction : -55°C ~ 250°C
0
4 in stock
1N8035-GA
GeneSiC Semiconductor
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-276AA
Supplier Device Package : TO-276
Operating Temperature - Junction : -55°C ~ 250°C
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-276AA
Supplier Device Package : TO-276
Operating Temperature - Junction : -55°C ~ 250°C
0
100 in stock
1N914
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 50mA
Speed : Small Signal =
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 175°C
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 500nA @ 75V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35 (DO-204AH)
Operating Temperature - Junction : -65°C ~ 175°C
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 50mA
Speed : Small Signal =
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 175°C
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 500nA @ 75V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35 (DO-204AH)
Operating Temperature - Junction : -65°C ~ 175°C
0
662 in stock
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