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Transphorm
- Transphorm is a global semiconductor company that develops gallium nitride (GaN) FETs for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses.
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Part Number
Manufacturer
Description
Unit Price
In Stock
TPH3206PD
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
493 in stock
TPH3206PS
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
342 in stock
TPH3206PSB
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 480V
FET Feature : -
Power Dissipation (Max) : 81W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 480V
FET Feature : -
Power Dissipation (Max) : 81W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
0
577 in stock
TPH3207WS
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 41 mOhm @ 32A, 8V
Vgs(th) (Max) @ Id : 2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 2197pF @ 400V
FET Feature : -
Power Dissipation (Max) : 178W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 41 mOhm @ 32A, 8V
Vgs(th) (Max) @ Id : 2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 2197pF @ 400V
FET Feature : -
Power Dissipation (Max) : 178W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3
0
335 in stock
TPH3208LD
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 4-PowerDFN
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 4-PowerDFN
0
100 in stock
TPH3208LDG
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 3-PowerDFN
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 3-PowerDFN
0
316 in stock
TPH3208LS
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 3-PowerDFN
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PQFN (8x8)
Package / Case : 3-PowerDFN
0
92 in stock
TPH3208LSG
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-PQFN (8x8)
Package / Case : 3-PowerDFN
Packaging : Tube
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-PQFN (8x8)
Package / Case : 3-PowerDFN
0
342 in stock
TPH3208PD
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 150°C
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 150°C
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
160 in stock
TPH3208PS
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
FET Feature : -
Power Dissipation (Max) : 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
134 in stock
TPH3212PS
Transphorm
Manufacturer : Transphorm
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 72 mOhm @ 17A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 1130pF @ 400V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 72 mOhm @ 17A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 1130pF @ 400V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
491 in stock
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