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ON Semiconductor

- ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Image
Part Number
Manufacturer
Description
Unit Price
In Stock

VN0300L VN0300L

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 100pF @ 15V
FET Feature : -
Power Dissipation (Max) : 350mW (Tc)
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

VN2222LL VN2222LL

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

VN2222LLG VN2222LLG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

VN2222LLRLRA VN2222LLRLRA

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

VN2222LLRLRAG VN2222LLRLRAG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

VN2410LG VN2410LG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Tc)
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
100 in stock

VN2410LZL1G VN2410LZL1G

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 240V
Current - Continuous Drain (Id) @ 25°C : 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Tc)
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

WDK1.0GEVK WDK1.0GEVK

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Series : -
Part Status : Obsolete
Main Purpose : Interface
Type : Watch
Specifications : Watch, Docking Station, Wristband, Cable
0
100 in stock

WMBUS-GEVB WMBUS-GEVB

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Series : *
Part Status : Active
Type : *
Function : *
Embedded : -
Utilized IC / Part : *
Primary Attributes : -
Supplied Contents : Board(s)
0
100 in stock

WPB4001-1E WPB4001-1E

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 260 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 87nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 220W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P-3L
Package / Case : TO-3P-3, SC-65-3
0
100 in stock

WPB4002 WPB4002

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tray
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 84nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 220W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3PB
Package / Case : TO-3P-3, SC-65-3
0
100 in stock

WPB4002-1E WPB4002-1E

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 84nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 220W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P-3L
Package / Case : TO-3P-3, SC-65-3
0
100 in stock