Microsemi
- Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. products include high-performance and radiation-hardened analog mixed-signal integrated circuits, fpgas, socs and asics; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally.
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : PNP
Current - Collector (Ic) (Max) : 1A
Voltage - Collector Emitter Breakdown (Max) : 175V
Vce Saturation (Max) @ Ib, Ic : 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max) : 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 50mA, 10V
Power - Max : 1.5W
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, No Lead
Supplier Device Package : UB
0
15 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 1A
Voltage - Collector Emitter Breakdown (Max) : 80V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) : 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 500mA, 10V
Power - Max : 500mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-206AA, TO-18-3 Metal Can
Supplier Device Package : TO-18
0
3 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 1A
Voltage - Collector Emitter Breakdown (Max) : 80V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 500mA, 10V
Power - Max : 500mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Surface Mount
Package / Case : 3-SMD, No Lead
Supplier Device Package : UB
0
114 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
358 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) : 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 300 @ 1mA, 5V
Power - Max : 350mW
Frequency - Transition : -
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-78-6 Metal Can
Supplier Device Package : TO-78-6
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : Military, MIL-PRF-19500/375
Part Status : Discontinued at
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : 50V
Drain to Source Voltage (Vdss) : 50V
Current - Drain (Idss) @ Vds (Vgs=0) : 10mA @ 15V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds : 6pF @ 15V
Resistance - RDS(On) : -
Power - Max : 300mW
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-206AF, TO-72-4 Metal Can
Supplier Device Package : TO-72
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 30V
Frequency - Transition : 400MHz
Noise Figure (dB Typ @ f) : -
Gain : -
Power - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 50mA, 5V
Current - Collector (Ic) (Max) : 400mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-205AD, TO-39-3 Metal Can
Supplier Device Package : TO-39
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 30V
Frequency - Transition : 400MHz
Noise Figure (dB Typ @ f) : -
Gain : -
Power - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 25 @ 50mA, 5V
Current - Collector (Ic) (Max) : 400mA
Operating Temperature : -65°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-205AD, TO-39-3 Metal Can
Supplier Device Package : TO-39
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : Military, MIL-PRF-19500/431
Part Status : Discontinued at
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : 40V
Drain to Source Voltage (Vdss) : 40V
Current - Drain (Idss) @ Vds (Vgs=0) : 8mA @ 20V
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : -
Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 20V
Resistance - RDS(On) : 80 Ohms
Power - Max : 360mW
Operating Temperature : -65°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-206AA, TO-18-3 Metal Can
Supplier Device Package : TO-18
0
100 in stock
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 40V
Frequency - Transition : 500MHz
Noise Figure (dB Typ @ f) : -
Gain : 10dB @ 175MHz
Power - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 10 @ 100mA, 5V
Current - Collector (Ic) (Max) : 400mA
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-205AD, TO-39-3 Metal Can
Supplier Device Package : TO-39
0
100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
