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IXYS RF
- The IXYS RF brand continues to provide high-performance MOSFETs, drivers, and integrated modules using the DE-Series package. The design team at IXYS has developed die specifically for use in their DE-Series package and have leveraged the available industry standard packaging to make their technology available to a wider array of applications and markets.
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Part Number
Manufacturer
Description
Unit Price
In Stock
IXFH21N50F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXFH)
Package / Case : TO-247-3
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXFH)
Package / Case : TO-247-3
0
155 in stock
IXFH6N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXFH)
Package / Case : TO-247-3
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXFH)
Package / Case : TO-247-3
0
132 in stock
IXFK21N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
0
88 in stock
IXFK24N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
0
93 in stock
IXFK44N50F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 156nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
Packaging : Tube
Series : HiPerRF™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 156nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
0
100 in stock
IXFK55N50F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264 (IXFK)
Package / Case : TO-264-3, TO-264AA
0
63 in stock
IXFN24N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC
0
8 in stock
IXFN55N50F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC
0
98 in stock
IXFT12N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268 (IXFT)
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268 (IXFT)
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
0
73 in stock
IXFT6N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268 (IXFT)
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-268 (IXFT)
Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
0
192 in stock
IXFX21N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™3
Package / Case : TO-247-3
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™3
Package / Case : TO-247-3
0
76 in stock
IXFX24N100F
IXYS RF
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™3
Package / Case : TO-247-3
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 560W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™3
Package / Case : TO-247-3
0
75 in stock
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