Global Power Technologies Group, Inc.
- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Silicon Carbide Schottky
Voltage - Peak Reverse (Max) : 1.2kV
Current - Average Rectified (Io) : 30A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
16 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Type : Single Phase
Technology : Silicon Carbide Schottky
Voltage - Peak Reverse (Max) : 1.2kV
Current - Average Rectified (Io) : 30A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
5 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 30A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tube
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 30A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
19 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 45A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 45A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 300µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
3 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) (per Diode) : 50A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 50A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 100µA @ 600V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
30 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) (per Diode) : 50A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 50A
Speed : Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 100µA @ 600V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
19 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Series : -
Part Status : Active
Type : -
Configuration : -
Current : 150A
Voltage : 1.7kV
Voltage - Isolation : 2500Vrms
Package / Case : SOT-227-4, miniBLOC
0
17 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Bulk
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 60A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 60A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 200µA @ 1200V
Operating Temperature - Junction : -55°C ~ 175°C
Mounting Type : Chassis Mount
Package / Case : SOT-227-4, miniBLOC
Supplier Device Package : SOT-227
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 25V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 25V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
0
100 in stock
Global Power Technologies Group
Manufacturer : Global Power Technologies Group
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.8 Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 395pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
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