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Alpha and Omega Semiconductor, Inc.

- Alpha and Omega Semiconductor, Inc., or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET and Power IC products. AOS seeks to differentiate itself by integrating its expertise in device physics, process technology, design and advanced packaging to optimize product performance and cost, and its product portfolio is designed to meet the ever increasing power efficiency requirements in high volume applications, including portable computers, flat panel TVs, battery packs, portable media players and power supplies.

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Part Number
Manufacturer
Description
Unit Price
In Stock

AOT502 AOT502

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 33V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1450pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta), 79W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock

AOT5B65M1 AOT5B65M1

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 15A
Vce(on) (Max) @ Vge, Ic : 1.98V @ 15V, 5A
Power - Max : 83W
Switching Energy : 80µJ (on), 70µJ (off)
Input Type : Standard
Gate Charge : 14nC
Td (on/off) @ 25°C : 8.5ns/106ns
Test Condition : 400V, 5A, 60 Ohm, 15V
Reverse Recovery Time (trr) : 195ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
914 in stock

AOT5N50 AOT5N50

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
677 in stock

AOT5N50_001 AOT5N50_001

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
0
100 in stock

AOT5N60 AOT5N60

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock

AOT7S65L AOT7S65L

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 434pF @ 100V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
674 in stock

AOT8N50 AOT8N50

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 850 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1042pF @ 25V
FET Feature : -
Power Dissipation (Max) : 192W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
954 in stock

AOT8N60 AOT8N60

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1370pF @ 25V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
100 in stock

AOT8N65_001 AOT8N65_001

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.15 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
0
100 in stock

AOT8N80L AOT8N80L

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.63 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1650pF @ 25V
FET Feature : -
Power Dissipation (Max) : 245W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
854 in stock

AOT8N80L_001 AOT8N80L_001

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.63 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1650pF @ 25V
FET Feature : -
Power Dissipation (Max) : 245W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
0
100 in stock

AOT9N50 AOT9N50

Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 850 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1042pF @ 25V
FET Feature : -
Power Dissipation (Max) : 192W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
0
652 in stock