Alpha and Omega Semiconductor, Inc.
- Alpha and Omega Semiconductor, Inc., or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET and Power IC products. AOS seeks to differentiate itself by integrating its expertise in device physics, process technology, design and advanced packaging to optimize product performance and cost, and its product portfolio is designed to meet the ever increasing power efficiency requirements in high volume applications, including portable computers, flat panel TVs, battery packs, portable media players and power supplies.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1954pF @ 100V
FET Feature : -
Power Dissipation (Max) : 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262F
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2028pF @ 100V
FET Feature : -
Power Dissipation (Max) : 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262F
Package / Case : TO-262-3 Full Pack, I²Pak
0
1001 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 717pF @ 100V
FET Feature : -
Power Dissipation (Max) : 27.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 841pF @ 100V
FET Feature : -
Power Dissipation (Max) : 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 199 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19.8nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1038pF @ 100V
FET Feature : -
Power Dissipation (Max) : 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3510pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 33.3W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26.4nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1278pF @ 100V
FET Feature : -
Power Dissipation (Max) : 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4050pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 33.3W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262F
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 263pF @ 100V
FET Feature : -
Power Dissipation (Max) : 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 372pF @ 100V
FET Feature : -
Power Dissipation (Max) : 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 434pF @ 100V
FET Feature : -
Power Dissipation (Max) : 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : -
Package / Case : TO-262-3 Full Pack, I²Pak
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : -
Series : *
Part Status : Obsolete
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
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