Alpha and Omega Semiconductor, Inc.
- Alpha and Omega Semiconductor, Inc., or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET and Power IC products. AOS seeks to differentiate itself by integrating its expertise in device physics, process technology, design and advanced packaging to optimize product performance and cost, and its product portfolio is designed to meet the ever increasing power efficiency requirements in high volume applications, including portable computers, flat panel TVs, battery packs, portable media players and power supplies.
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Part Number
Manufacturer
Description
Unit Price
In Stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 30A
Current - Collector Pulsed (Icm) : 45A
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 15A
Power - Max : 36W
Switching Energy : 290µJ (on), 200µJ (off)
Input Type : Standard
Gate Charge : 32nC
Td (on/off) @ 25°C : 15ns/94ns
Test Condition : 400V, 15A, 20 Ohm, 15V
Reverse Recovery Time (trr) : 298ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
1000 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 717pF @ 100V
FET Feature : -
Power Dissipation (Max) : 27.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3F
Package / Case : TO-220-3 Full Pack
0
1000 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : aMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 841pF @ 100V
FET Feature : -
Power Dissipation (Max) : 34W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3F
Package / Case : TO-220-3 Full Pack
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : -
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : -
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : -
Series : -
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : *
Part Status : Active
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack
0
820 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 20A
Power - Max : 45W
Switching Energy : 470µJ (on), 270µJ (off)
Input Type : Standard
Gate Charge : 46nC
Td (on/off) @ 25°C : 26ns/122ns
Test Condition : 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr) : 322ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
902 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : Alpha IGBT™
Part Status : Active
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 40A
Current - Collector Pulsed (Icm) : 60A
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 20A
Power - Max : 45W
Switching Energy : 580µJ (on), 280µJ (off)
Input Type : Standard
Gate Charge : 46nC
Td (on/off) @ 25°C : 26ns/123ns
Test Condition : 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr) : 292ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220
0
990 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3500pF @ 50V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3F
Package / Case : TO-220-3 Full Pack
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3607pF @ 100V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3F
Package / Case : TO-220-3 Full Pack
0
100 in stock
Alpha and Omega Semiconductor, Inc.
Manufacturer : Alpha & Omega Semiconductor Inc.
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3607pF @ 100V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack
0
100 in stock
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